N-Channel and P-Channel Silicon Field-Effect Transistor (FET) in a surface-mount SOIC-8 package. Features a Drain to Source Breakdown Voltage of 8V and a maximum Drain-source On Resistance of 18mR. Operates with a Gate to Source Voltage up to 8V and offers a continuous drain current of 4.1A. Includes fast switching characteristics with a turn-on delay time of 21ns and a fall time of 45ns. Maximum power dissipation is 1.3W, with an operating temperature range from -55°C to 150°C.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power1.3W
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Technical Specifications
Vishay SI4501ADY-T1-E3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.1A |
| Drain to Source Breakdown Voltage | 8V |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | 8V |
| Drain-source On Resistance-Max | 18mR |
| Fall Time | 45ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.061inch |
| Lead Free | Lead Free |
| Length | 0.196inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Polarization | N |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 21ns |
| Width | 0.157inch |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4501ADY-T1-E3 Datasheet
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