The SI4501ADY-T1-GE3 is a surface mount N and P-Channel Junction Field-Effect Transistor (JFET) with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a maximum power dissipation of 1.3W and a maximum continuous drain current of 4.1A. The device is packaged in a SOIC package and is RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power1.3W
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Technical Specifications
Vishay SI4501ADY-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.1A |
| Drain to Source Breakdown Voltage | 8V |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | 8V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.3W |
| Rds On Max | 18mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 800mV |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4501ADY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4501ADY-T1-GE3 to view detailed technical specifications.
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