N and P-Channel MOSFET featuring 30V drain-source voltage and 12A continuous drain current. This surface-mount device offers low on-resistance with a maximum of 17mR at 10V. It operates within a temperature range of -55°C to 150°C and supports a maximum power dissipation of 4.5W. Key switching characteristics include a 6ns turn-on delay and 9ns fall time.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Vishay Si4501BDY-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 21mR |
| Drain to Source Voltage (Vdss) | 8V |
| Fall Time | 9ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 805pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 4.5W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Rds On Max | 17mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 800mV |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 6ns |
| Weight | 0.019048oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay Si4501BDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay Si4501BDY-T1-GE3 to view detailed technical specifications.
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