The SI4501DY-E3 is a dual N-channel/P-channel junction field-effect transistor (JFET) with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current rating of 9A and a maximum power dissipation of 2.5W. The device is packaged in a small outline (SO) package with a height of 1.55mm and a width of 4mm. The SI4501DY-E3 is RoHS compliant and available in a package quantity of 100.
PackageSO
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Vishay SI4501DY-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | -8V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Number of Channels | 2 |
| Package Quantity | 100 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL, P-CHANNEL |
| RoHS Compliant | Yes |
| Series | SI4 |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4501DY-E3 Datasheet
Download the complete datasheet for Vishay SI4501DY-E3 to view detailed technical specifications.
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