The SI4501DY-T1-E3 is a P-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 9A and a drain to source breakdown voltage of 8V. The device is packaged in a small outline package and is RoHS compliant. The transistor has a maximum power dissipation of 2.5W and a turn-off delay time of 110ns.
PackageSO
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Vishay SI4501DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 8V |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | -8V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | Yes |
| Series | SI45xxxY |
| Turn-Off Delay Time | 110ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4501DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4501DY-T1-E3 to view detailed technical specifications.
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