N-channel and P-channel MOSFET with 30V drain-to-source breakdown voltage. Features 4.9A continuous drain current and 80mΩ drain-to-source resistance. Offers 2W maximum power dissipation and operates within a -55°C to 150°C temperature range. This SMD/SMT component is housed in an SO package with dimensions of 5mm (L) x 4mm (W) x 1.55mm (H).
PackageSO
PolarityN-CHANNEL, P-CHANNEL
Power2W
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Technical Specifications
Vishay SI4532ADY technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 4.9A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Nominal Vgs | 1V |
| Number of Channels | 2 |
| On-State Resistance | 53mR |
| Package Quantity | 100 |
| Polarity | N-CHANNEL, P-CHANNEL |
| Power Dissipation | 2W |
| RoHS Compliant | No |
| Series | SI4 |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.002998oz |
| Width | 4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI4532ADY Datasheet
Download the complete datasheet for Vishay SI4532ADY to view detailed technical specifications.
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