N/P-Channel MOSFET, 30V Drain-Source Voltage, 3A Continuous Drain Current, 53mR Max Drain-Source On-Resistance. Features 8ns Turn-On Delay, 21ns Turn-Off Delay, and 10ns Fall Time. Packaged in an 8-SOIC surface-mount case with a maximum power dissipation of 1.2W. Operates from -55°C to 150°C and is RoHS compliant.
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Vishay SI4532ADY-T1-GE3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 53mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
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