Dual N-channel MOSFET, 30V drain-source voltage, 15.2A continuous drain current, and 10mΩ drain-to-source resistance. Features include 4.16W max power dissipation, 1.535nF input capacitance, and 45ns fall time. This surface-mount component operates from -55°C to 150°C and is packaged in a tape and reel.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4618DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 15.2A |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 45ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.55mm |
| Input Capacitance | 1.535nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 4.16W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 17mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 24ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4618DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4618DY-T1-E3 to view detailed technical specifications.
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