N-Channel Silicon Field-Effect Transistor (FET) designed for small signal applications. Features a 30V Drain-Source Voltage (Vdss) and a maximum continuous drain current of 38A. Offers a low Drain-Source On-Resistance (Rds On) of 3mR. Operates within a temperature range of -55°C to 150°C and supports both through-hole and surface mount configurations. Packaged in a compact SOP-8 (SO) format.
PackageSO
MountingThrough Hole, Surface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4628DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
38A
Drain to Source Resistance
2.4mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
3mR
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Input Capacitance
3.45nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
7.8W
Mount
Through Hole, Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
3mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
SkyFET®, TrenchFET®
Threshold Voltage
1V
Turn-Off Delay Time
39ns
Turn-On Delay Time
28ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4628DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4628DY-T1-GE3 to view detailed technical specifications.
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