N-channel MOSFET with 30V drain-source voltage and 12A continuous drain current. Features low 11.5mΩ drain-source resistance at 10V gate drive and 6.25W maximum power dissipation. Surface mount SO package with fast switching times, including 23ns turn-on and 29ns turn-off delays. Operating temperature range from -55°C to 150°C.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4646DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 11.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Input Capacitance | 1.79nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6.25W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 11.5mR |
| RoHS Compliant | Yes |
| Series | SkyFET®, TrenchFET® |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 23ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4646DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4646DY-T1-GE3 to view detailed technical specifications.
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