N-Channel Silicon MOSFET, SOIC-8 package, featuring 30V Drain-Source Voltage (Vdss) and 16A Continuous Drain Current (ID). Offers low 9.4mR Drain-to-Source Resistance (Rds On Max) and 4.45W Max Power Dissipation. Operates across a wide temperature range from -55°C to 150°C. Designed for surface mounting with a 1-element configuration and TrenchFET® series technology.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI4684DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Resistance | 9.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.55mm |
| Input Capacitance | 2.08nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 4.45W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 9.4mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4684DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4684DY-T1-E3 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
