N-channel MOSFET, 30V Vdss, 8.9A continuous drain current, and 11mΩ Rds On. Features a 1.58nF input capacitance and 1.4W max power dissipation. Packaged in an 8-SOIC surface mount case with dimensions of 5mm length, 4mm width, and 1.55mm height. Operates between -55°C and 150°C, with turn-on delay of 13ns and turn-off delay of 33ns. RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4688DY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
8.9A
Drain to Source Resistance
11mR
Drain to Source Voltage (Vdss)
30V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Input Capacitance
1.58nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.4W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
11mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
33ns
Turn-On Delay Time
13ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4688DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4688DY-T1-E3 to view detailed technical specifications.
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