The SI4752DY-T1-GE3 is a N-CHANNEL MOSFET with a continuous drain current rating of 25A and a drain to source voltage rating of 30V. It has a drain to source resistance of 5.5mR and an input capacitance of 1.7nF. The device is packaged in a surface mount SO package and is rated for operation between -55°C and 150°C. It is RoHS compliant and has a maximum power dissipation of 6.25W.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4752DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.7nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6.25W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 5.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SkyFET®, TrenchFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 18ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4752DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4752DY-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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