N-channel MOSFET, 25V Drain-to-Source Voltage, 8A Continuous Drain Current, and 23mΩ Rds On Max. This surface-mount component features a low input capacitance of 680pF and fast switching times with a 15ns turn-on delay and 20ns turn-off delay. Operating across a wide temperature range from -55°C to 150°C, it offers 5W maximum power dissipation. Packaged in an 8-SOIC case, this RoHS compliant component is supplied on tape and reel.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4778DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.5mm |
| Input Capacitance | 680pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 23mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4778DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4778DY-T1-E3 to view detailed technical specifications.
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