Dual N-channel MOSFET with 30V drain-source voltage (Vdss) and 5.3A continuous drain current (ID). Features low 22mR drain-to-source on-resistance (Rds On Max) at a nominal Vgs of 2V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1W. Packaged in SOIC for surface mounting, this RoHS compliant component offers fast switching with turn-on delay time of 15ns and fall time of 12ns.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4816DY-T1-E3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 22MR |
| Fall Time | 12ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 27mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4816DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4816DY-T1-E3 to view detailed technical specifications.
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