The SI4829DY-T1-GE3 is a surface mount N-channel MOSFET with a maximum drain to source voltage of 20V and continuous drain current of 2A. It features a maximum power dissipation of 3.1W and an on-resistance of 215mR. The device is packaged in a SOIC package and is compliant with RoHS regulations. It is suitable for use in a variety of applications, including power management and switching circuits.
PackageSOIC
MountingSurface Mount
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Technical Specifications
Vishay SI4829DY-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance | 210pF |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Cut Tape |
| Rds On Max | 215mR |
| RoHS Compliant | Yes |
| Series | LITTLE FOOT® |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4829DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4829DY-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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