The SI4832DY-T1 is a N-CHANNEL MOSFET from Vishay with a continuous drain current of 6.9A and a drain to source breakdown voltage of 30V. It features a drain to source resistance of 18mR and a fall time of 10ns. The device operates over a temperature range of -55°C to 150°C and is available in a SO package. Note that this device is not RoHS compliant.
Sign in to ask questions about the Vishay SI4832DY-T1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SI4832DY-T1 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 6.9A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 18mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.4W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 35ns |
| RoHS | Not Compliant |
Download the complete datasheet for Vishay SI4832DY-T1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
