2 N-Channel MOSFET, 30V Vdss, 5.7A continuous drain current, and 22mR Rds On. This surface mount component features a 2 N-Channel FET type, operating from -55°C to 150°C, with a maximum power dissipation of 1.1W. It is packaged in an 8-SOIC case, measuring 5mm in length, 4mm in width, and 1.55mm in height, supplied on tape and reel.
Sign in to ask questions about the Vishay SI4834BDY-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SI4834BDY-T1-GE3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 9ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 22mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI4834BDY-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
