The SI4834CDY-T1-GE3 is a 2-channel N-channel MOSFET from Vishay with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 7.5A and a drain to source voltage of 30V. The device features a drain to source resistance of 20mR and an input capacitance of 950pF. The MOSFET is packaged in a surface mount SO package and is RoHS compliant.
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Vishay SI4834CDY-T1-GE3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 950pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.9W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-On Delay Time | 17ns |
| Weight | 0.01787oz |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI4834CDY-T1-GE3 to view detailed technical specifications.
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