P-channel JFET, surface mount, SOIC package. Features 8.7A continuous drain current, -30V drain-source voltage, and 18mΩ drain-source on-resistance. Operates with a gate-source voltage up to 25V and a threshold voltage of -3V. Offers fast switching with turn-on delay of 44ns and fall time of 15ns. Maximum power dissipation is 2.5W, with operating temperatures from -55°C to 150°C. RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Vishay SI4835DDY-T1-E3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
8.7A
Drain to Source Resistance
18mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
18MR
Fall Time
15ns
Gate to Source Voltage (Vgs)
25V
Height
1.5mm
Input Capacitance
360pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
3R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
28ns
Turn-On Delay Time
44ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4835DDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4835DDY-T1-E3 to view detailed technical specifications.
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