The SI4842DY-T1-E3 is a single N-channel MOSFET from Vishay with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 23A and a drain to source resistance of 4.5mR. The device is packaged in a SO case and is available in tape and reel packaging with 2500 units per reel.
PackageSO
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Vishay SI4842DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Resistance | 4.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| RoHS Compliant | Yes |
| Series | SI4 |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 17ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4842DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4842DY-T1-E3 to view detailed technical specifications.
No datasheet is available for this part.