N-channel MOSFET for general-purpose small signal applications. Features 150V drain-to-source breakdown voltage and a continuous drain current of 2.7A. Offers a low drain-source on-resistance of 85mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.5W. Packaged in an SOP-8 surface-mount case.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power1.5W
Quick Jump:
Technical Specifications
Vishay SI4848DY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
2.7A
Drain to Source Breakdown Voltage
150V
Drain to Source Resistance
85mR
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
85mR
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
1.5W
Rds On Max
85mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
24ns
Turn-On Delay Time
9ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4848DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4848DY-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
