N-channel MOSFET, surface mount, 16V drain-source breakdown voltage, 17A continuous drain current, and 3.3mΩ maximum drain-source on-resistance. Features fast switching with 42ns turn-on delay and 120ns turn-off delay, and a 38ns fall time. Operates within a temperature range of -55°C to 150°C with 1.6W maximum power dissipation. Packaged in an 8-SOIC case, this RoHS compliant component is supplied on tape and reel.
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Vishay SI4862DY-T1-E3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 16V |
| Drain to Source Resistance | 3.3mR |
| Drain to Source Voltage (Vdss) | 16V |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 3.3mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 120ns |
| Turn-On Delay Time | 42ns |
| Weight | 0.01787oz |
| Width | 4mm |
| RoHS | Compliant |
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