N-channel, general-purpose small-signal MOSFET with a continuous drain current of 17A and a drain-to-source breakdown voltage of 20V. Features a low drain-source on-resistance of 3.5mΩ, ideal for efficient switching applications. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 1.6W. Packaged in an 8-pin SO (SOP) surface-mount package, supplied on tape and reel. RoHS compliant for environmental responsibility.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4864DY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
17A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
3.5mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
3.5mR
Fall Time
44ns
Gate to Source Voltage (Vgs)
8V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Nominal Vgs
600mV
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
3.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
150ns
Turn-On Delay Time
40ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4864DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4864DY-T1-E3 to view detailed technical specifications.
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