N-channel JFET for general-purpose small signal applications. Features a 12V drain-source voltage (Vdss) and a continuous drain current (ID) of 21.5A. Offers a low drain-source on-resistance (Rds On) of 5.3mR. Operates with a gate-source voltage (Vgs) of 8V and a threshold voltage of 1V. Packaged in a surface-mount SOIC-8 case, this component is halogen-free and RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI4866BDY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
21.5A
Drain to Source Resistance
5.3mR
Drain to Source Voltage (Vdss)
12V
Drain-source On Resistance-Max
5.3mR
Fall Time
9ns
Gate to Source Voltage (Vgs)
8V
Height
1.5mm
Input Capacitance
5.02nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
4.45W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
5.3mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1V
Turn-Off Delay Time
57ns
Turn-On Delay Time
13ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4866BDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4866BDY-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
