N-CHANNEL MOSFET, 30V Vdss, 16A continuous drain current, and 12mR Rds On at 10V gate-source voltage. This surface mount component features a low threshold voltage of 2.6V and fast switching times with an 8ns fall time and 20ns turn-on/off delays. Operating across a -55°C to 150°C temperature range, it offers a maximum power dissipation of 2.5W and is packaged in a compact SO case.
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Vishay Si4890BDY-T1-E3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.5mm |
| Input Capacitance | 1.535nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 12mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.6V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
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