N-channel MOSFET featuring 30V drain-source breakdown voltage and 8.8A continuous drain current. Offers a low 12mΩ maximum drain-source on-resistance. Designed for surface mounting in an 8-SOIC package, this component operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.6W. Includes fast switching characteristics with turn-on delay of 10ns and fall time of 11ns.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Vishay SI4892DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 8.8A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 12mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.061inch |
| Lead Free | Lead Free |
| Length | 0.196inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 12mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 10ns |
| Width | 0.157inch |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4892DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4892DY-T1-E3 to view detailed technical specifications.
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