Vishay
SI4894DY-T1-E3
Small Signal Field-Effect Transistor, 8.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8
Small Signal Field-Effect Transistor, 8.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8
PackageSO
PolarityN-CHANNEL
Power1.4W
Quick Jump:
Technical Specifications
Vishay SI4894DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 12.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 12mR |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.4W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4894DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4894DY-T1-E3 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
