N-channel MOSFET, TrenchFET® series, designed for general-purpose small signal applications. Features 80V drain-source breakdown voltage and 16.5mΩ maximum drain-source on-resistance. Continuous drain current capability of 9.5A. Operates within a temperature range of -55°C to 150°C. Packaged in a RoHS compliant SOIC surface-mount package.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4896DY-T1-E3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
9.5A
Drain to Source Breakdown Voltage
80V
Drain to Source Resistance
16.5mR
Drain to Source Voltage (Vdss)
80V
Drain-source On Resistance-Max
16.5mR
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.56W
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
16.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
40ns
Turn-On Delay Time
17ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4896DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4896DY-T1-E3 to view detailed technical specifications.
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