N-Channel Silicon MOSFET, 2-element, surface mount device in a SOIC-8 package. Features 60V drain-source voltage, 5.3A continuous drain current, and 58mΩ drain-source resistance. Operates from -55°C to 150°C with a 2.5V threshold voltage. Includes 15ns turn-on and turn-off delay times, 10ns fall time, and 665pF input capacitance. This component is RoHS compliant and halogen-free.
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Vishay SI4900DY-T1-GE3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Resistance | 58mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Input Capacitance | 665pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 58mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
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