N-Channel Silicon MOSFET, 2-element, surface mount device in a SOIC-8 package. Features 60V drain-source voltage, 5.3A continuous drain current, and 58mΩ drain-source resistance. Operates from -55°C to 150°C with a 2.5V threshold voltage. Includes 15ns turn-on and turn-off delay times, 10ns fall time, and 665pF input capacitance. This component is RoHS compliant and halogen-free.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4900DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
5.3A
Drain to Source Resistance
58mR
Drain to Source Voltage (Vdss)
60V
Fall Time
10ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Input Capacitance
665pF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Channels
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
58mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2.5V
Turn-Off Delay Time
15ns
Turn-On Delay Time
15ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4900DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4900DY-T1-GE3 to view detailed technical specifications.
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