N-Channel Silicon Metal-oxide Semiconductor FET, a 2-element JFET with 40V Drain to Source Voltage (Vdss) and 8A Continuous Drain Current (ID). Features 16mR Drain to Source Resistance (Rds On Max), 2V Threshold Voltage, and 16V Gate to Source Voltage (Vgs). This surface mount device, packaged in SOIC-8 (MS-012AA), offers a max power dissipation of 2W and operates from -55°C to 150°C. Includes 19ns fall time, 62ns turn-off delay, and 88ns turn-on delay.
Vishay SI4904DY-T1-GE3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 19ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.5mm |
| Input Capacitance | 2.39nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 16mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 88ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
No datasheet is available for this part.
