The SI4906DY-T1-GE3 is a 2 N-Channel TrenchFET MOSFET from Vishay, featuring a maximum operating temperature of 150°C and a minimum operating temperature of -50°C. It has a maximum power dissipation of 3.1W and is RoHS compliant. The device is packaged in a SOIC package and is suitable for surface mount applications.
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| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Resistance | 39mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 7ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 625pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 39mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 17ns |
| RoHS | Compliant |
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