P-channel MOSFET, SO package, 40V drain-source voltage, 8A continuous drain current, and 27mΩ drain-to-source resistance. Features include a 1.2V threshold voltage, 2nF input capacitance, and 13ns fall time. Operates from -55°C to 150°C with a maximum power dissipation of 3.2W. Surface mountable, RoHS compliant, and supplied on tape and reel.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4909DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 27mR |
| Drain to Source Voltage (Vdss) | -40V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 27mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1.2V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4909DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4909DY-T1-GE3 to view detailed technical specifications.
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