N-channel MOSFET, 40V Drain to Source Breakdown Voltage, 7.6A Continuous Drain Current, 27mΩ Drain to Source Resistance. Features 2 N-Channel FETs, 2V Threshold Voltage, and 16V Gate to Source Voltage. Operates within -55°C to 150°C, with 2W Max Power Dissipation. Packaged in an 8-pin SOIC surface mount case, supplied on tape and reel.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
Vishay SI4910DY-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.6A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 27mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 855pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 27mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 22ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4910DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4910DY-T1-GE3 to view detailed technical specifications.
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