Dual N-channel MOSFET, 30V Vds, 10.5A continuous drain current, and 18mΩ max Rds(on). Features a 9ns turn-on delay and 27ns turn-off delay, with a 13ns fall time. Surface mountable in an 8-SOIC package, this component operates from -55°C to 150°C with a max power dissipation of 3.5W. RoHS compliant and lead-free.
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Vishay SI4916DY-T1-E3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 10.5A |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 18mR |
| Fall Time | 13ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.5W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Series | LITTLE FOOT® |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
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