P-channel MOSFET, 12V Vdss, 6.7A continuous drain current, and 18mR Rds On resistance. This surface mount component features a 2-channel configuration within an 8-pin SOIC package. Operating temperature range is -55°C to 150°C with a maximum power dissipation of 1.1W. Includes fast switching characteristics with turn-on delay of 25ns and fall time of 155ns.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4931DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 6.7A |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 155ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 230ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4931DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4931DY-T1-GE3 to view detailed technical specifications.
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