Dual N-channel MOSFET transistor featuring 30V drain-source voltage and 6.9A continuous drain current. Offers a low 35mΩ maximum drain-source on-resistance at a nominal 3V gate-source voltage. This surface-mount device operates within a -55°C to 150°C temperature range and is packaged in an 8-pin SOIC for tape and reel distribution.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4936BDY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
6.9A
Drain to Source Resistance
35mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
35mR
Dual Supply Voltage
30V
Fall Time
25ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Input Capacitance
530pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.8W
Mount
Surface Mount
Nominal Vgs
3V
Number of Channels
2
On-State Resistance
51mR
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
35mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
3V
Turn-Off Delay Time
12ns
Turn-On Delay Time
5ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4936BDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4936BDY-T1-E3 to view detailed technical specifications.
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