Dual N-channel MOSFET featuring 30V drain-source voltage and 6.9A continuous drain current. Offers low 35mΩ drain-to-source resistance and fast switching speeds with 5ns turn-on and 10ns fall times. Surface mountable in an 8-SOIC package, this component operates from -55°C to 150°C with a maximum power dissipation of 2.8W.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4936BDY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 6.9A |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 530pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 5ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4936BDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4936BDY-T1-GE3 to view detailed technical specifications.
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