P-channel MOSFET, 20V Vds, 6.3A continuous drain current, and 19mΩ Rds On. This surface mount component features a 8-pin SOIC package with a maximum power dissipation of 1.1W. Operating temperature range is -55°C to 150°C.
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Vishay SI4943BDY-T1-E3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 6.3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 19mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 19mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 1.1W |
| Radiation Hardening | No |
| Rds On Max | 19mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 94ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
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