P-channel MOSFET featuring 20V drain-source voltage and 8A continuous drain current. Surface mountable in an 8-SOIC package, this component offers a low 19.2mΩ drain-source on-resistance. Operating across a -50°C to 150°C temperature range, it boasts a maximum power dissipation of 3.1W. Key switching characteristics include a 50ns turn-on delay and a 29ns turn-off delay.
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Vishay SI4943CDY-T1-E3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 19.2mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 19.2mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.945nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 19.2mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 50ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
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