P-channel, 2-element, silicon MOSFET for surface mount applications. Features a continuous drain current of 8A and a drain-source voltage of -20V. Offers a low drain-source on-resistance of 19.2mR. Operates within a temperature range of -50°C to 150°C with a maximum power dissipation of 3.1W. Packaged in tape and reel for automated assembly.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4943CDY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
8A
Drain to Source Resistance
19.2mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
19.2MR
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.945nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-50°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Number of Channels
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
19.2mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1V
Turn-Off Delay Time
29ns
Turn-On Delay Time
50ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4943CDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4943CDY-T1-GE3 to view detailed technical specifications.
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