Dual N-channel MOSFET featuring 30V drain-source voltage and 7.2A continuous drain current. Offers low 14.5mΩ Rds On at Vgs=10V and 26.5mΩ Rds On at Vgs=4.5V. Surface mountable in an 8-SOIC package, this component boasts fast switching with turn-on delay of 108ns and fall time of 26ns. Maximum power dissipation is 2.5W with an operating temperature range of -55°C to 150°C.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4972DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 7.2A |
| Drain to Source Resistance | 26.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 26ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.08nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 14.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 108ns |
| Weight | 0.01787oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4972DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4972DY-T1-GE3 to view detailed technical specifications.
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