The SI4980DY-T1-GE3 is a N-CHANNEL power MOSFET with a drain to source breakdown voltage of 80V and a continuous drain current of 3.7A. It has a drain to source resistance of 75mR and a power dissipation of 2W. The device is available in a tape and reel packaging with a quantity of 2500 units. The operating temperature range is from -55°C to 150°C. The MOSFET is RoHS compliant and suitable for use in high-temperature applications.
PolarityN-CHANNEL
Power2W
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Technical Specifications
Vishay SI4980DY-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 75mR |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4980DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4980DY-T1-GE3 to view detailed technical specifications.
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