Dual N-channel MOSFET, 75V Drain-Source Voltage, 3.6A Continuous Drain Current, and 48mΩ Rds On. Features a 7ns turn-on delay and 10ns fall time, with a maximum power dissipation of 1.4W. Surface mountable in an 8-pin SOIC package, operating from -55°C to 175°C. RoHS compliant and lead-free.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI4992EY-T1-E3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Resistance | 48mR |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 48mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.019048oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4992EY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4992EY-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
