P-channel MOSFET with 30V drain-source breakdown voltage and 6A continuous drain current. Features 30mΩ maximum drain-source on-resistance and 1.34nF input capacitance. Operates from -55°C to 150°C with a maximum power dissipation of 6.3W. Packaged in a 1206-8 SMD/SMT surface mount package.
PackageSMD/SMT
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI5403DC-T1-GE3 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 30mR |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 1.34nF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6.3W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 30mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 50ns |
| Weight | 0.002998oz |
| Width | 1.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5403DC-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5403DC-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
