P-channel MOSFET with 20V drain-source voltage and 6A continuous drain current. Features low 36mΩ maximum drain-source on-resistance and 150°C maximum operating temperature. Surface mountable in a ChipFET package, this component offers fast switching with 12ns fall time, 25ns turn-on delay, and 30ns turn-off delay. RoHS compliant and lead-free, it operates across a -55°C to 150°C temperature range.
PackageSMD/SMT
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI5457DC-T1-GE3 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Resistance | 46mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 36mR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5.7W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 36mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.002998oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5457DC-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5457DC-T1-GE3 to view detailed technical specifications.
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