P-channel MOSFET with 20V drain-source voltage and 8A continuous drain current. Features low 52mΩ drain-source on-resistance and 10.9W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Surface mountable in an SOIC package, this component offers fast switching with turn-on delay of 6ns and fall time of 9ns.
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| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 52mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 52mR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 665pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 10.9W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 52mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1.4V |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 6ns |
| RoHS | Compliant |
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