N-channel MOSFET, 30V Vdss, 6A continuous drain current, and 28mΩ max drain-source on-resistance. Features a 1206-8 SMD/SMT package for surface mounting, with a max power dissipation of 5.7W. Operating temperature range from -55°C to 150°C, with fast switching speeds including 5ns turn-on delay and 10ns fall time. RoHS compliant and lead-free.
PackageSMD/SMT
MountingSurface Mount
PolarityN-CHANNEL
Power2.3W
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Technical Specifications
Vishay SI5468DC-T1-GE3 technical specifications.
General
Package/Case
SMD/SMT
Continuous Drain Current (ID)
6A
Drain to Source Resistance
28mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
28MR
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1.1mm
Input Capacitance
435pF
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
5.7W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.3W
Radiation Hardening
No
Rds On Max
28mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
15ns
Turn-On Delay Time
5ns
Weight
0.002998oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI5468DC-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5468DC-T1-GE3 to view detailed technical specifications.
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