P-channel MOSFET with 12V drain-source voltage and 5.9A continuous drain current. Features low 27mΩ drain-to-source resistance and a compact 1206-8 SMD/SMT package. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.3W. Designed for surface mounting, this component offers fast switching speeds with turn-on delay of 25ns and fall time of 90ns.
PackageSMD/SMT
Resistance0.027R
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI5473DC-T1-GE3 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 5.9A |
| Drain to Source Resistance | 27mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 90ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.1mm |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 27mR |
| Resistance | 0.027R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 145ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.002998oz |
| Width | 1.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5473DC-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5473DC-T1-GE3 to view detailed technical specifications.
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