P-Channel MOSFET with a -12V drain-source voltage and 6A continuous drain current. Features a low 32mΩ drain-source on-resistance and 1.6nF input capacitance. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 5.7W. Packaged in a compact 1206-8 SMD/SMT case for surface mounting, with fast switching times including 20ns turn-on delay and 40ns fall time.
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Vishay SI5475DDC-T1-GE3 technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 6A |
| Current | 6A |
| Drain to Source Resistance | 32mR |
| Drain to Source Voltage (Vdss) | -12V |
| Drain-source On Resistance-Max | 32mR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.1mm |
| Input Capacitance | 1.6nF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5.7W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 32mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | No |
| Series | TrenchFET® |
| Threshold Voltage | -400mV |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 20ns |
| Voltage | 12V |
| Weight | 0.002998oz |
| Width | 1.65mm |
| RoHS | Not CompliantNo |
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